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FF600R12KE4 IGBT Trench Half Bridge Module - 600A 1200V High Power Semiconductor for Industrial Motor Drives and Renewable Energy Systems
FF600R12KE4 IGBT Trench Half Bridge Module - 600A 1200V High Power Semiconductor for Industrial Motor Drives and Renewable Energy Systems

FF600R12KE4 IGBT Trench Half Bridge Module - 600A 1200V High Power Semiconductor for Industrial Motor Drives and Renewable Energy Systems

$174.9 $318 -45%

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SKU:98608292

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Product Description

Infineon FF600R12KE4 Dual IGBT Half Bridge Module

Features

  • Pressure Contact Technology
  • Electrically insulated base plate
  • Industrial standard package
  • Medium Switching Speed
  • 6000V Isolation
  • 61.4mm Base Width

Applications

  • Deep Cycle Applications
  • Controlled Rectifiers
  • Softstart AC motor control
  • High Frequency Inverter
  • Drives
    Specification
    Infineon Part NumberFF600R12KE4
    Vces1200V
    Transistor ConfigurationDual IGBT Module (Half Bridge)
    Ic(nom) @ 80 Deg C600 Amp
    Package SizeW:61.4mm L:130mm D:38mm
    V(isol)6 kV
    Vf @ 25 Deg C2.8 - 3.5V
    Tj(max)150°C
    Td(on) @ 25 Deg C0.28uS
    Td(off) @ 25 Deg C1.55uS
    I(ces) @ 25 Deg C5mA
    Rcc 0.37mOhm
    TerminalsM5 Screw
    Hole Centres114 x 124mm(M6)
    Gate TerminalsM4
    R th(j-c) 51°C/W
    R th(c-h) 36°C/W
    Weight1100g
    Mounting Torque5 Nm (4 Nm Terminals)
    Factory Pack Qty10
    CertificationUL Listed, ROHS
    Infineon HeadquartersGermany

    Datasheet